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| Item |
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CERAMIC FILTER |
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| Description |
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3pin, 10.5MHz, Ceramic Filter |
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| Vendor |
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TOKO |
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| D/C |
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n/a |
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| Part No. |
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CFSK105M4, 10.5MHz |
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| Q'ty |
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200 EA |
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| Item |
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FET |
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| Description |
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TO220. 60V 50A 130W. Low RDS(on) (0.023 Ω )@VGS=10V. N-Channel MOSFET. |
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| Vendor |
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SemiWell |
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| D/C |
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02+ |
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| Part No. |
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SFP50N06 |
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| Q'ty |
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0 EA |
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| Item |
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PHOTOINTERRUPTER |
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| Description |
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SENSOR. ASSAY-LEAD WIRE. Marking:038W |
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| Vendor |
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ROHM |
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| D/C |
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02+ |
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| Part No. |
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SIU-5009. 038W |
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| Q'ty |
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5 EA |
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| Item |
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IC-NNN |
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| Description |
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SIP-8pin. LOW NOISE DUAL PREAMPLIFIER. |
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| Vendor |
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NEC |
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| D/C |
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n/a |
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| Part No. |
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UPC1228HA |
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| Q'ty |
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200 EA |
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| Item |
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FET |
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| Description |
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TO-92M. -18V 10mA 200mW. FM Tuner Application. VHF Band Amplifier Application |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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2SK161-G |
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| Q'ty |
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200 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. 50V100mA300mW. Built in bias Resistor (R1=22KΩ, R2=22KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1003 |
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| Q'ty |
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250 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. -50V 100mA 300mW. Built in bias Resistor (R1=47KΩ, R2=47KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR2004 |
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| Q'ty |
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500 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. -50V 100mA 300mW. Built in bias Resistor (R1=47KΩ, R2=22KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR2008 |
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| Q'ty |
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500 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. 50V100mA300mW. Built in bias Resistor (R1=22KΩ, R2=47KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1007 |
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| Q'ty |
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1000 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. 50V100mA300mW. Built in bias Resistor (R1=47KΩ, R2=22KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1008 |
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| Q'ty |
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430 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. -50V 100mA 300mW. Built in bias Resistor (R1=22KΩ, R2=22KΩ). Switching Application Transistor |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR2003 |
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| Q'ty |
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1000 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92M. -50V 150mW 200mW. Low Frequency Amplifier. 저주파 증폭기 |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSA1175-Y |
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| Q'ty |
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150 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. -40V 100mA 300mW. Built in bias Resistor (R=22KΩ) |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR2011 |
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| Q'ty |
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4232 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92S. 40V 100mA 300mW. Built in Resistor 10Kohm |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1210 |
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| Q'ty |
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3000 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO92M. 50V 100mA 200mW. With Built-in Bias Resistor:47K |
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| Vendor |
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KEC |
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| D/C |
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n/a |
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| Part No. |
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KRC114M |
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| Q'ty |
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335 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. Switching Application. Built in bias Resistor (R1=4.7KΩ. R2=4.7KΩ) |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR2001 |
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| Q'ty |
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145 EA |
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| Item |
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Marking Code |
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| Description |
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TO-92 |
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| Vendor |
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ANY |
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| D/C |
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n/a |
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| Part No. |
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R2003 Marking Code |
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| Q'ty |
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1065 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92. 50V 100mA 300mW. Built in bias Resistor (R1=47KΩ, R2=47KΩ). Switching Application |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1004 |
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| Q'ty |
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640 EA |
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| Item |
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TRANSISTOR |
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| Description |
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TO-92S. 40V 100mA 300mW. Built in Resistor 10Kohm |
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| Vendor |
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SAMSUNG |
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| D/C |
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n/a |
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| Part No. |
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KSR1210 |
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| Q'ty |
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1663 EA |
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| Item |
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CHIP BEAD-1608 |
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| Description |
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Size:1608(0603). 500ohm-5%. 200mA. Effective for suppressing noise at high frequency. 고주파 노이즈 억제에 효과적이다. RoHS |
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| Vendor |
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CTC |
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| D/C |
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09+ |
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| Part No. |
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HB-1M1608-501JT |
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| Q'ty |
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200 EA |
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