Item FET
 Description 2300−2400 MHz, 45 W AVG., 28 V. RF Power LDMOS Transistor. N−Channel Enhancement−Mode Lateral MOSFET
 Vendor NXP
 D/C n/a
 Part No. AFT23H200-4S2L   
 Q'ty 0 EA
 Remark taping
 
 
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