| Item |
Part No. |
Description |
DataSheet |
Q'ty |
Vendor |
D/C |
Remark |
| FET |
IRF624 |
TO220. 250V 4.1A 0.84 ohm. N-Channel MOSFET |
|
175 |
SAMSUNG |
97+ |
bulk |
| FET |
IRF740 |
TO-220. 400V 10A 0.46 OHM. N-CHANNEL MOSFET |
|
29 |
MOTOROLA |
NN/Q |
bulk |
| FET |
IRF830 |
TO220. 500V 4.5A. 1.5ohm. N-Channel Power MOSFET |
|
0 |
SAMSUNG |
n/a |
bulk |
| FET |
IRF840 |
TO220 |
|
1 |
SAMSUNG |
95+ |
BULK |
| FET |
IRF9510STRL |
D2PAK |
|
38400 |
IR |
00+ |
packing reel 800pcs |
| FET |
IRFP150A |
TO-3P. 100V 43A 0.04 OHM. N-CHANNEL MOSFET |
|
14 |
FAIRCHILD |
n/a |
bulk |
| FET |
IRFP450A |
TO3P. 500V14A.0.4 OHM. N-CHANNEL MOSFET |
|
0 |
FAIRCHILD |
n/a |
bulk |
| IC-GGG |
IRFR010TR |
. |
|
1750 |
IR |
94+ |
.
|
| IC-GGG |
IRFR320TR |
. |
|
4000 |
IR |
01+ |
.
|
| IC-GGG |
IRFR9020TR-ND |
TO-252AA.embossing |
|
0 |
IR |
91+ |
.
|
| IC-NNN |
IRFZ40 |
TO220 |
|
266 |
SGS |
n/a |
. |
| FET |
IRFZ44 |
TO-220, 60V 50A 0.024Ω, Power MOSFET Transistor |
|
137 |
SAMSUNG |
n/a+ |
TUBE |
| FET |
IRFZ44 |
TO-220, 60V 50A 0.028Ω, Power MOSFET Transistor |
|
47 |
IR |
n/a |
TUBE 50 pcs |
| FET |
IRFZ44 |
TO-220, 60V 50A 0.028Ω, Power MOSFET Transistor |
|
8200 |
IR |
n/a |
Tube 50pcs |
| FET |
IRFZ46N |
TO220. 55V 53A 0.02 ohm. Power MOSFET Transistor |
|
28 |
I.R |
n/a |
bulk |
| IGBT |
IRG4IBC30FD |
TO220F. 600V 20.3A 45W. IGBT TRANSISTOR |
|
0 |
IR |
05+ |
tube |
| SENSOR-IR LED |
IR-LED. 5mm Flat Type |
Size:5mm. Maximum Reverse Voltage:5V. 100mA 150mW. Peak Wavelength (Typical):880nm. Infrared Emitting Diodes. 적외선 방출 다이오드 |
|
1005 |
n/a |
n/a |
bulk |
| FET |
IRLML5103-TR |
SOT23. Generation V Technology. Ultra Low On-Resistance. P-Channel MOSFET. Marking Code:1DKL |
|
1650 |
INTERNATIOAL RECTIFIER |
00+ |
broken reel |
| FET |
IRLML5103-TR |
SOT23. Generation V Technology. Ultra Low On-Resistance. P-Channel MOSFET. Marking Code:1DKL |
|
6000 |
INTERNATIOAL RECTIFIER |
00+ |
Vacuum reel 3000pcs |
| IC-GGG |
IS61C64AH-15J |
SOJ.64K SRAM HIGH SPEED |
|
1840 |
ISSI |
98+ |
. |
