[ÃÑ °Ë»ö µ¥ÀÌÅÍ : 12650 °Ç] Part No.¸¦ Ŭ¸¯ÇÏ½Ã¸é »ó¼¼Á¤º¸¸¦ º¸½Ç ¼ö ÀÖ½À´Ï´Ù Part No.   
Item Part No. Description DataSheet Q'ty Vendor D/C Remark
DIP SWITCH KSD08H DIP-8 Position. DIP Switch 7 OTAX n/a Tube
TRANSISTOR KSD1616-Y. KSD1616Y TO-92. 60V 1A 750mA. Audio Frequency Power Amplifier & Medium Speed Switching 200 FAIRCHILD 02+ bulk
TRANSISTOR KSD362-R TO-220. 150V 5A 40W. Marking code:D362. B/W TV Horizontal Deflection Output 180 SAMSUNG n/a bulk
TRANSISTOR KSD471A TO92. 40V 1A 800mA. NPN. Audio Frequency Power Amplifier 5 SAMSUNG n/a bulk
TRANSISTOR KSD868 TO3P. 1500V 5A 65W 4 SAMSUNG n/a bulk
TRANSISTOR KSD869 TO3P. 1500V 7A 65W 20 SAMSUNG n/a bulk
TRANSISTOR KSE13007 TO-220. 700V(400V) 8A 80W. High Speed Switching Transistor, °í¼Ó ½ºÀ§Äª Æ®·£Áö½ºÅÍing 23 SAMSUNG n/a+ bulk
TRANSISTOR KSE13007-H2, E13007-2 TO-220. 700V(400V) 8A 80W. High Speed Switching Transistor, °í¼Ó ½ºÀ§Äª Æ®·£Áö½ºÅÍ 1200 SAMSUNG n/a+ bulk 200pcs
TRANSISTOR KSE13009 TO220. 700V12A100W. High Voltage Switch Mode Application 110 SAMSUNG n/a bulk
TRANSISTOR KSE340 TO-126. 300V 500mA 20W. Æ®·£Áö½ºÅÍ 25 FAIRCHILD n/a bulk
TRANSISTOR KSE350 TO-126. 300V 500mA 20W. Æ®·£Áö½ºÅÍ 25 FAIRCHILD n/a bulk
SENSOR KSM-603-SM-22M Receiver Module Photo Diode Sensor. RoHS 385 KODENGHI 09+ 100 pcs
SENSOR KSM-913TC5 37.9KHz. Receiver Module Sensor 750 KODENSHI 06+ Bulk 50pcs
SENSOR KSM-913TC5N 37.9KHz. Receiver Module Sensor 25 KODENSHI 06+ Bulk 50pcs
TRANSISTOR KSP13. KSP13-245 TO-92. 30V 500mA 625mW. Darlington Transistor 45 ANY n/a bulk
TRANSISTOR KSP42 TO-92. NPN. 300V 500mA 625mW. High Voltage Transistor 30 SAMSUNG n/a bulk
TRANSISTOR KSR1003 TO-92. 50V100mA300mW. Built in bias Resistor (R1=22K¥Ø, R2=22K¥Ø). Switching Application Transistor 250 SAMSUNG n/a bulk
TRANSISTOR KSR1004 TO-92. 50V 100mA 300mW. Built in bias Resistor (R1=47K¥Ø, R2=47K¥Ø). Switching Application 640 SAMSUNG n/a bulk
TRANSISTOR KSR1007 TO-92. 50V100mA300mW. Built in bias Resistor (R1=22K¥Ø, R2=47K¥Ø). Switching Application Transistor 1000 SAMSUNG n/a BULK
TRANSISTOR KSR1008 TO-92. 50V100mA300mW. Built in bias Resistor (R1=47K¥Ø, R2=22K¥Ø). Switching Application Transistor 430 SAMSUNG n/a bulk
   

 

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